Product overview

Part Number
TP65H070LSG-TR
Manufacturer
Transphorm
Product Category
RF JFET Transistors
Description
RF JFET Transistors GAN FET 650V 25A PQFN88

Documents & Media

Datasheets
TP65H070LSG-TR

Product Attributes

Id - Continuous Drain Current :
25 A
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
SMD/SMT
Package / Case :
PQFN-8
Packaging :
Cut Tape, Reel
Pd - Power Dissipation :
96 W
Technology :
GaN
Transistor Polarity :
N-Channel
Transistor Type :
HEMT
Vds - Drain-Source Breakdown Voltage :
650 V
Vgs - Gate-Source Breakdown Voltage :
- 20 V, + 20 V

Description

RF JFET Transistors GAN FET 650V 25A PQFN88

Price & Procurement

Associated Product

  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C256-6VQG100C
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C256-6TQG144C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 36-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C32A-6VQG44C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 72-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C64A-7VQG44C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 72-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C64A-7VQG44I
  • STMicroelectronics
    Microprocessors - MPU MPU ARM926 Cortex 8-ch DMA 32KB Rom
  • STMicroelectronics
    Embedded - CPLDs (Complex Programmable Logic Devices)

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