Product overview
- Part Number
- C1210C470KFTACAUTO7210
- Manufacturer
- KEMET Electronics
- Product Category
- Multilayer Ceramic Capacitors MLCC - SMD/SMT
- Description
- Multilayer Ceramic Capacitors MLCC - SMD/SMT 1500Vo 47pF X8G 1210 10% AECQ200
Documents & Media
- Datasheets
- C1210C470KFTACAUTO7210
Product Attributes
- Dielectric :
- X8G
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Packaging :
- Reel
- Qualification :
- AEC-Q200
- Series :
- SMD COMM X8G HVHT150C
- Termination :
- Standard
- Termination Style :
- SMD/SMT
Description
Multilayer Ceramic Capacitors MLCC - SMD/SMT 1500Vo 47pF X8G 1210 10% AECQ200
Price & Procurement
Associated Product
You May Also Be Interested In
Part | Manufacturer | Stock | Description |
---|---|---|---|
BLW50F | Advanced Semiconductor, Inc. | 133 | RF Bipolar Transistors RF Transistor |
MRF429 | MACOM | 60 | RF Bipolar Transistors |
MRF393 | MACOM | 29 | RF Bipolar Transistors 30-500MHz 100Watts 28Volt Gain 8.5dB |
HFA3096BZ96 | Renesas Electronics | 2,495 | RF Bipolar Transistors W/ANNEAL TXARRAY 3X NPN 2X PNP 16N |
MRF581A | Advanced Semiconductor, Inc. | 2,395 | RF Bipolar Transistors RF Transistor |
MRF587 | Advanced Semiconductor, Inc. | 20 | RF Bipolar Transistors RF Transistor |
BFR380L3E6327XTMA1 | Infineon Technologies | 14,679 | RF Bipolar Transistors NPN Silicon RF TRANSISTOR |
2N5643 | Advanced Semiconductor, Inc. | 2 | RF Bipolar Transistors RF Transistor |
MRF586 | Advanced Semiconductor, Inc. | 172 | RF Bipolar Transistors RF Transistor |
2SC5108-Y,LF | Toshiba | 3,000 | RF Bipolar Transistors Radio-frequency Bipolar Transistor |
MRF8372LF | Advanced Semiconductor, Inc. | 285 | RF Bipolar Transistors RF Transistor |
MRF315A | Advanced Semiconductor, Inc. | 10 | RF Bipolar Transistors RF Transistor |
BFP520H6327XTSA1 | Infineon Technologies | 4,366 | RF Bipolar Transistors RF BIP TRANSISTOR |
BFP620H7764XTSA1 | Infineon Technologies | 5,494 | RF Bipolar Transistors RF BIP TRANSISTOR |
MMBT5401-G | Comchip Technology | 6,000 | RF Bipolar Transistors VCEO=-150V IC=-600mA |