Product overview

Part Number
SMK316AB7333MLHT
Manufacturer
Taiyo Yuden
Product Category
Multilayer Ceramic Capacitors MLCC - SMD/SMT
Description
Multilayer Ceramic Capacitors MLCC - SMD/SMT 1206 630VDC 0.033uF 20% X7R AEC-Q200

Documents & Media

Datasheets
SMK316AB7333MLHT

Product Attributes

Capacitance :
0.033 uF
Case Code - in :
1206
Case Code - mm :
3216
Dielectric :
X7R
Height :
1.8 mm
Maximum Operating Temperature :
+ 125 C
Minimum Operating Temperature :
- 55 C
Packaging :
Cut Tape, Reel
Product :
General Type MLCCs
Qualification :
AEC-Q200
Series :
M-H
Termination :
Standard
Termination Style :
SMD/SMT
Tolerance :
20 %
Voltage Rating DC :
630 VDC

Description

Multilayer Ceramic Capacitors MLCC - SMD/SMT 1206 630VDC 0.033uF 20% X7R AEC-Q200

Price & Procurement

Associated Product

  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C256-6VQG100C
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C256-6TQG144C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 36-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C32A-6VQG44C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 72-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C64A-7VQG44C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 72-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C64A-7VQG44I
  • STMicroelectronics
    Microprocessors - MPU MPU ARM926 Cortex 8-ch DMA 32KB Rom
  • STMicroelectronics
    Embedded - CPLDs (Complex Programmable Logic Devices)

You May Also Be Interested In

Part Manufacturer Stock Description
AS6C8016-55TINTR Alliance Memory 3,000 SRAM 8M L-Power, 2.7-3.6V 512k x 16, 48pin
IS61WV20488FBLL-10TLI-TR ISSI 3,000 SRAM 16Mb,High-Speed,Async,2Mbx8,10ns, 2.4v-3.6v, 44 Pin TSOP II, RoHS
IS62WV25616ECLL-35BLI-TR ISSI 3,000 SRAM 4Mb, Low Power/Power Saver,Async,256K x 16,35ns, 3.3v +/-5%,48 Ball mBGA (6x8 mm), RoHS
IS64WV6416BLL-15BLA3-TR ISSI 3,000 SRAM 1Mb,High-Speed/Low Power,Async,64K x 16,12ns/3.3v or 15ns/2.5v-3.6v,48 Ball mBGA (6x8 mm), RoHS, Automotive temp
AS6C1608-55BINTR Alliance Memory 3,000 SRAM 16M 3V 55ns 2048Kx8 LP Asyn SRAM
IS61VVF409618B-7.5TQL ISSI 3,000 SRAM 72Mb,Flowthrough,Sync,4Mb x 18,1.8V I/O,100 Pin TQFP, RoHS
IS62C51216AL-55TLI-TR ISSI 3,000 SRAM 8Mb, Low Power Async, 512Kx16, 5v,44 Pin TSOP II, RoHS
IS62C10248AL-55TLI-TR ISSI 3,000 SRAM 8Mb, Low Power Async, 1Mbx8 5v,44 Pin TSOP II, RoHS
IS61WV51216EDBLL-8TLI-TR ISSI 3,000 SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16,8ns,2.4V-3.6V,44 Pin TSOP II, RoHS
IS61WV20488FBLL-8TLI-TR ISSI 3,000 SRAM 16Mb,High-Speed,Async,2Mbx8,8ns, 2.4v-3.6v, 44 Pin TSOP II, RoHS
IS62WV51216HBLL-45B2LI-TR ISSI 3,000 SRAM 8Mb, Low Power/Power Saver,Async,512K x 16,45ns,2.2v~3.6v, 2 CS, 48 Ball mBGA (6x8mm), RoHS
IS66WVE4M16ECLL-70BLI-TR ISSI 3,000 SRAM 64Mb,Pseudo SRAM,Asynch/Page, 4M x 16,70ns,VDD 1.7V~1.95V, VDDQ 2.7V~3.6V,48 Ball BGA (6x8 mm), RoHS
IS62WV10248HBLL-45BLI-TR ISSI 3,000 SRAM 8Mb, Low Power/Power Saver,Async,1Mb x 8, 45ns, 2.2v~3.6v,48 Ball mBGA (6x8 mm), RoHS
IS62WV51216HBLL-45BLI-TR ISSI 3,000 SRAM 8Mb, Low Power/Power Saver,Async,512K x 16,45ns,2.2v~3.6v,48 Ball mBGA (6x8mm), RoHS
IS62WV10248HBLL-45B2LI-TR ISSI 3,000 SRAM 8Mb, Low Power/Power Saver,Async,1Mb x 8, 45ns, 2.2v~3.6v,2 CS, 48 Ball mBGA (6x8 mm), RoHS