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Documents & Media
- Datasheets
- RM8N650HD-T
Product Attributes
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 8 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 1 Channel
- Package / Case :
- TO-263-3
- Packaging :
- Reel
- Pd - Power Dissipation :
- 80 W
- Qg - Gate Charge :
- 22 nC
- Rds On - Drain-Source Resistance :
- 540 mOhms
- Technology :
- SI
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 650 V
- Vgs - Gate-Source Voltage :
- - 30 V, + 30 V
- Vgs th - Gate-Source Threshold Voltage :
- 2.5 V
Description
MOSFET D2-PAK MOSFET
Price & Procurement
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