Datasheets

SI2314EDS-T1-GE3

Channel Mode :

Enhancement

Id - Continuous Drain Current :

3.77 A

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 55 C

Mounting Style :

SMD/SMT

Number of Channels :

1 Channel

Package / Case :

TO-236-3

Packaging :

Reel

Pd - Power Dissipation :

750 mW

Qg - Gate Charge :

11 nC

Rds On - Drain-Source Resistance :

33 mOhms

Technology :

SI

Tradename :

TrenchFET

Transistor Polarity :

N-Channel

Vds - Drain-Source Breakdown Voltage :

20 V

Vgs - Gate-Source Voltage :

- 12 V, + 12 V

Vgs th - Gate-Source Threshold Voltage :

950 mV