sales@szcinty.com
Product overview
- Part Number
- IRFBG30PBF
- Manufacturer
- Vishay Semiconductors
- Product Category
- MOSFET
- Description
- MOSFET 1000V N-CH HEXFET
Documents & Media
- Datasheets
- IRFBG30PBF
Product Attributes
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 3.1 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- Through Hole
- Number of Channels :
- 1 Channel
- Package / Case :
- TO-220AB-3
- Packaging :
- Tube
- Pd - Power Dissipation :
- 125 W
- Qg - Gate Charge :
- 80 nC
- Rds On - Drain-Source Resistance :
- 5 Ohms
- Technology :
- SI
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 1 kV
- Vgs - Gate-Source Voltage :
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage :
- 4 V
Description
MOSFET 1000V N-CH HEXFET
Price & Procurement
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