Product overview
- Part Number
- BSZ12DN20NS3 G
- Manufacturer
- Infineon Technologies
- Product Category
- MOSFET
- Description
- MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3
Documents & Media
- Datasheets
- BSZ12DN20NS3 G
Product Attributes
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 11.3 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 1 Channel
- Package / Case :
- TSDSON-8
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 50 W
- Qg - Gate Charge :
- 6.5 nC
- Rds On - Drain-Source Resistance :
- 108 mOhms
- Technology :
- SI
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 200 V
- Vgs - Gate-Source Voltage :
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage :
- 3 V
Description
MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3
Price & Procurement
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