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Product overview
- Part Number
- IMW65R030M1HXKSA1
- Manufacturer
- Infineon Technologies
- Product Category
- MOSFET
- Description
- MOSFET SILICON CARBIDE MOSFET
Documents & Media
- Datasheets
- IMW65R030M1HXKSA1
Product Attributes
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 58 A
- Maximum Operating Temperature :
- + 175 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- Through Hole
- Number of Channels :
- 1 Channel
- Package / Case :
- TO-247-3
- Packaging :
- Tube
- Pd - Power Dissipation :
- 197 W
- Qg - Gate Charge :
- 48 nC
- Rds On - Drain-Source Resistance :
- 42 mOhms
- Technology :
- SiC
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 650 V
- Vgs - Gate-Source Voltage :
- - 5 V, + 23 V
- Vgs th - Gate-Source Threshold Voltage :
- 5.7 V
Description
MOSFET SILICON CARBIDE MOSFET
Price & Procurement
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