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Product overview
- Part Number
- RGT16NS65DGC9
- Manufacturer
- ROHM Semiconductor
- Product Category
- IGBT Transistors
- Description
- IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
Documents & Media
- Datasheets
- RGT16NS65DGC9
Product Attributes
- Collector- Emitter Voltage VCEO Max :
- 650 V
- Collector-Emitter Saturation Voltage :
- 1.65 V
- Configuration :
- Single
- Continuous Collector Current at 25 C :
- 16 A
- Maximum Gate Emitter Voltage :
- 30 V
- Maximum Operating Temperature :
- + 175 C
- Minimum Operating Temperature :
- - 40 C
- Mounting Style :
- Through Hole
- Package / Case :
- TO-262-3
- Packaging :
- Tube
- Pd - Power Dissipation :
- 94 W
- Technology :
- SI
Description
IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
Price & Procurement
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