Product overview
- Part Number
- IXGK55N120A3H1
- Manufacturer
- IXYS
- Product Category
- IGBT Modules
- Description
- IGBT Modules Low-Frequency Range Low Vcesat w/ Diode
Documents & Media
- Datasheets
- IXGK55N120A3H1
Product Attributes
- Collector- Emitter Voltage VCEO Max :
- 1.2 kV
- Collector-Emitter Saturation Voltage :
- 1.85 V
- Configuration :
- Single
- Continuous Collector Current at 25 C :
- 125 A
- Gate-Emitter Leakage Current :
- 100 nA
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Package / Case :
- TO-264-3
- Packaging :
- Tube
- Product :
- IGBT Silicon Modules
Description
IGBT Modules Low-Frequency Range Low Vcesat w/ Diode
Price & Procurement
Associated Product
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