sales@szcinty.com
Product overview
- Part Number
- APTGTQ200DA65T3G
- Manufacturer
- Microsemi / Microchip
- Product Category
- IGBT Modules
- Description
- IGBT Modules CC3199
Documents & Media
- Datasheets
- APTGTQ200DA65T3G
Product Attributes
- Collector- Emitter Voltage VCEO Max :
- 650 V
- Collector-Emitter Saturation Voltage :
- 1.65 V
- Configuration :
- Single
- Continuous Collector Current at 25 C :
- 200 A
- Gate-Emitter Leakage Current :
- 480 nA
- Maximum Operating Temperature :
- + 125 C
- Minimum Operating Temperature :
- - 40 C
- Package / Case :
- SP3F
- Packaging :
- Tube
- Pd - Power Dissipation :
- 483 W
- Product :
- IGBT Silicon Modules
Description
IGBT Modules CC3199
Price & Procurement
Associated Product
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