sales@szcinty.com
Product overview
- Part Number
- APTCV50H60T3G
- Manufacturer
- Microsemi / Microchip
- Product Category
- IGBT Modules
- Description
- IGBT Modules DOR CC3133
Documents & Media
- Datasheets
- APTCV50H60T3G
Product Attributes
- Collector- Emitter Voltage VCEO Max :
- 600 V
- Collector-Emitter Saturation Voltage :
- 1.5 V
- Configuration :
- Full Bridge
- Continuous Collector Current at 25 C :
- 80 A
- Gate-Emitter Leakage Current :
- 600 nA
- Maximum Operating Temperature :
- + 100 C
- Minimum Operating Temperature :
- - 40 C
- Package / Case :
- SP3-32
- Packaging :
- Tube
- Pd - Power Dissipation :
- 176 W
- Product :
- IGBT Silicon Modules
Description
IGBT Modules DOR CC3133
Price & Procurement
Associated Product
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