Product overview

Part Number
BSM35GD120DN2E3224
Manufacturer
Infineon Technologies
Product Category
IGBT Modules
Description
IGBT Modules N-CH 1.2KV 50A

Documents & Media

Product Attributes

Collector- Emitter Voltage VCEO Max :
1200 V
Collector-Emitter Saturation Voltage :
2.7 V
Configuration :
Hex
Continuous Collector Current at 25 C :
50 A
Gate-Emitter Leakage Current :
150 nA
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 40 C
Package / Case :
EconoPACK 2
Packaging :
Tray
Pd - Power Dissipation :
280 W
Product :
IGBT Silicon Modules

Description

IGBT Modules N-CH 1.2KV 50A

Price & Procurement

Associated Product

  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C256-6VQG100C
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C256-6TQG144C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 36-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C32A-6VQG44C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 72-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C64A-7VQG44C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 72-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C64A-7VQG44I
  • STMicroelectronics
    Microprocessors - MPU MPU ARM926 Cortex 8-ch DMA 32KB Rom
  • STMicroelectronics
    Embedded - CPLDs (Complex Programmable Logic Devices)

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