Product overview

Part Number
BSM75GAL120DN2
Manufacturer
Infineon Technologies
Product Category
IGBT Modules
Description
IGBT Modules 1200V 75A CHOPPER

Documents & Media

Datasheets
BSM75GAL120DN2

Product Attributes

Collector- Emitter Voltage VCEO Max :
1200 V
Collector-Emitter Saturation Voltage :
2.5 V
Configuration :
Half Bridge
Continuous Collector Current at 25 C :
105 A
Gate-Emitter Leakage Current :
400 nA
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 40 C
Package / Case :
Half Bridge GAL 1
Packaging :
Tray
Pd - Power Dissipation :
625 W
Product :
IGBT Silicon Modules

Description

IGBT Modules 1200V 75A CHOPPER

Price & Procurement

Associated Product

  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C256-6VQG100C
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C256-6TQG144C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 36-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C32A-6VQG44C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 72-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C64A-7VQG44C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 72-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C64A-7VQG44I
  • STMicroelectronics
    Microprocessors - MPU MPU ARM926 Cortex 8-ch DMA 32KB Rom
  • STMicroelectronics
    Embedded - CPLDs (Complex Programmable Logic Devices)

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