sales@szcinty.com
Product overview
- Part Number
- 2N5550 TIN/LEAD
- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Description
- Bipolar Transistors - BJT NPN 160Vcbo 140Vceo 6.0Vebo 600mA 625mW
Documents & Media
- Datasheets
- 2N5550 TIN/LEAD
Product Attributes
- Collector- Base Voltage VCBO :
- 160 V
- Collector- Emitter Voltage VCEO Max :
- 140 V
- Collector-Emitter Saturation Voltage :
- 0.15 V
- Configuration :
- Single
- Emitter- Base Voltage VEBO :
- 6 V
- Gain Bandwidth Product fT :
- 300 MHz
- Maximum DC Collector Current :
- -
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 65 C
- Mounting Style :
- Through Hole
- Package / Case :
- TO-92-3
- Packaging :
- Bulk
- Pd - Power Dissipation :
- 625 mW
- Series :
- 2N5550
- Transistor Polarity :
- NPN
Description
Bipolar Transistors - BJT NPN 160Vcbo 140Vceo 6.0Vebo 600mA 625mW
Price & Procurement
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