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Product overview
- Part Number
- MJD42C-QJ
- Manufacturer
- Nexperia
- Product Category
- Bipolar Transistors - BJT
- Description
- Bipolar Transistors - BJT MJD42C-Q - 100 V, 6 A PNP high power bipolar transistor
Documents & Media
- Datasheets
- MJD42C-QJ
Product Attributes
- Collector- Emitter Voltage VCEO Max :
- 100 V
- Collector-Emitter Saturation Voltage :
- 1.5 V
- Configuration :
- Single
- Emitter- Base Voltage VEBO :
- 6 V
- Gain Bandwidth Product fT :
- 3 MHz
- Maximum DC Collector Current :
- 10 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Package / Case :
- DPAK-3
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 1.6 W
- Transistor Polarity :
- PNP
Description
Bipolar Transistors - BJT MJD42C-Q - 100 V, 6 A PNP high power bipolar transistor
Price & Procurement
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