sales@szcinty.com
Product overview
- Part Number
- HN1A01FE-GR,LXHF
- Manufacturer
- Toshiba
- Product Category
- Bipolar Transistors - BJT
- Description
- Bipolar Transistors - BJT AUTO AEC-Q PNP + PNP Tr VCEO:-50V Ic:-0.15A hFE:200-400 SOT-563 (ES6)
Documents & Media
- Datasheets
- HN1A01FE-GR,LXHF
Product Attributes
- Collector- Base Voltage VCBO :
- 50 V
- Collector- Emitter Voltage VCEO Max :
- 50 V
- Collector-Emitter Saturation Voltage :
- 0.1 V
- Configuration :
- Dual
- Emitter- Base Voltage VEBO :
- 5 V
- Gain Bandwidth Product fT :
- 80 MHz
- Maximum Operating Temperature :
- + 150 C
- Mounting Style :
- SMD/SMT
- Package / Case :
- ES-6
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 100 mW
- Qualification :
- AEC-Q200
- Transistor Polarity :
- PNP
Description
Bipolar Transistors - BJT AUTO AEC-Q PNP + PNP Tr VCEO:-50V Ic:-0.15A hFE:200-400 SOT-563 (ES6)
Price & Procurement
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