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Product overview
- Part Number
- BCV 61C E6327
- Manufacturer
- Infineon Technologies
- Product Category
- Bipolar Transistors - BJT
- Description
- Bipolar Transistors - BJT NPN Silicon Double TRANSISTOR
Documents & Media
- Datasheets
- BCV 61C E6327
Product Attributes
- Collector- Base Voltage VCBO :
- 30 V
- Collector- Emitter Voltage VCEO Max :
- 30 V
- Collector-Emitter Saturation Voltage :
- 200 mV
- Configuration :
- Dual
- Emitter- Base Voltage VEBO :
- 6 V
- Gain Bandwidth Product fT :
- 250 MHz
- Maximum DC Collector Current :
- 200 mA
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 65 C
- Mounting Style :
- SMD/SMT
- Package / Case :
- SOT-143-4
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 300 mW
- Series :
- BCV61
- Transistor Polarity :
- NPN
Description
Bipolar Transistors - BJT NPN Silicon Double TRANSISTOR
Price & Procurement
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