Product overview
- Part Number
- DXTN10060DFJBQ-7
- Manufacturer
- Diodes Incorporated
- Product Category
- Bipolar Transistors - BJT
- Description
- Bipolar Transistors - BJT SS Low Sat Transist
Documents & Media
- Datasheets
- DXTN10060DFJBQ-7
Product Attributes
- Collector- Base Voltage VCBO :
- 100 V
- Collector- Emitter Voltage VCEO Max :
- 60 V
- Collector-Emitter Saturation Voltage :
- 240 mV
- Configuration :
- Single
- Emitter- Base Voltage VEBO :
- 8 V
- Gain Bandwidth Product fT :
- 125 MHz
- Maximum DC Collector Current :
- 6 A
- Maximum Operating Temperature :
- + 175 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Package / Case :
- U-DFN2020-3
- Packaging :
- Cut Tape, Reel
- Pd - Power Dissipation :
- 1.8 W
- Qualification :
- AEC-Q101
- Transistor Polarity :
- NPN
Description
Bipolar Transistors - BJT SS Low Sat Transist
Price & Procurement
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