Product overview

Part Number
DPLS350E-13
Manufacturer
Diodes Incorporated
Product Category
Bipolar Transistors - BJT
Description
Bipolar Transistors - BJT 1000mW -50Vceo

Documents & Media

Datasheets
DPLS350E-13

Product Attributes

Collector- Base Voltage VCBO :
- 60 V
Collector- Emitter Voltage VCEO Max :
- 50 V
Collector-Emitter Saturation Voltage :
- 300 mV
Configuration :
Single
Emitter- Base Voltage VEBO :
- 6 V
Gain Bandwidth Product fT :
100 MHz
Maximum DC Collector Current :
- 5 A
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
SMD/SMT
Package / Case :
SOT-223-4
Packaging :
Cut Tape, MouseReel, Reel
Pd - Power Dissipation :
1000 mW
Series :
DPLS350
Transistor Polarity :
PNP

Description

Bipolar Transistors - BJT 1000mW -50Vceo

Price & Procurement

Associated Product

  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C256-6VQG100C
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C256-6TQG144C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 36-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C32A-6VQG44C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 72-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C64A-7VQG44C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 72-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C64A-7VQG44I
  • STMicroelectronics
    Microprocessors - MPU MPU ARM926 Cortex 8-ch DMA 32KB Rom
  • STMicroelectronics
    Embedded - CPLDs (Complex Programmable Logic Devices)

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