Product overview

Part Number
45JR15E
Manufacturer
Ohmite
Product Category
Wirewound Resistors - Through Hole
Description
Wirewound Resistors - Through Hole 5watt .15ohm 5% Axial

Documents & Media

Datasheets
45JR15E

Product Attributes

Length :
23.8 mm
Maximum Operating Temperature :
+ 275 C
Minimum Operating Temperature :
+ 25 C
Packaging :
Bulk
Power Rating :
5 W
Resistance :
150 mOhms
Series :
40
Temperature Coefficient :
90 PPM / C
Termination Style :
Axial
Tolerance :
5 %
Voltage Rating :
460 V
Width :
8.7 mm

Description

Wirewound Resistors - Through Hole 5watt .15ohm 5% Axial

Price & Procurement

Associated Product

  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C256-6VQG100C
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C256-6TQG144C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 36-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C32A-6VQG44C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 72-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C64A-7VQG44C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 72-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C64A-7VQG44I
  • STMicroelectronics
    Microprocessors - MPU MPU ARM926 Cortex 8-ch DMA 32KB Rom
  • STMicroelectronics
    Embedded - CPLDs (Complex Programmable Logic Devices)

You May Also Be Interested In

Part Manufacturer Stock Description
TJ40S04M3L,LXHQ Toshiba 11,991 MOSFET 68W 1MHz Automotive; AEC-Q101
IPD80R2K7C3AATMA1 Infineon Technologies 3,000 MOSFET AUTOMOTIVE
BSZ0500NSIATMA1 Infineon Technologies 5,000 MOSFET TRENCH <= 40V
STP18NM60N STMicroelectronics 2,000 MOSFET N-channel 600 V 0.27 ohm 13A MDmesh
SPD07N60C3ATMA1 Infineon Technologies 7,212 MOSFET LOW POWER_LEGACY
TPHR7904PB,L1XHQ Toshiba 10,024 MOSFET 170W 1MHz Automotive; AEC-Q101
STW28N65M2 STMicroelectronics 1,200 MOSFET PTD HIGH VOLTAGE
DMP1046UFDB-13 Diodes Incorporated 78,930 MOSFET 20V P-Ch Enh Mode 8Vgs 915pF 10.7nC
DMN3032LFDBQ-13 Diodes Incorporated 40,000 MOSFET Dual N-Ch Enh FET 30V 20Vgss 1.0W
DMTH6016LFVWQ-7 Diodes Incorporated 6,000 MOSFET MOSFET BVDSS: 41V-60V
TPCC8105,L1Q Toshiba 10,980 MOSFET PWR MOS PD=30W F=1MHZ
DMPH6050SSD-13 Diodes Incorporated 18,222 MOSFET MOSFET BVDSS: 41V-60V
SIZ250DT-T1-GE3 Vishay Semiconductors 5,918 MOSFET DUAL N-CHANNEL 60-V PowerPAIR 3 x 3S
IPD038N06N3 G Infineon Technologies 5,000 MOSFET N-Ch 60V 90A DPAK-2 OptiMOS 3
IPD90N04S4-02 Infineon Technologies 2,500 MOSFET N-Ch 40V 90A DPAK-2 OptiMOS-T2