Product overview
- Part Number
- P6SMB43CAHR4G
- Manufacturer
- Taiwan Semiconductor
- Product Category
- ESD Suppressors / TVS Diodes
- Description
- ESD Suppressors / TVS Diodes 600W, 43V, 5%, Bidirectional, TVS
Documents & Media
- Datasheets
- P6SMB43CAHR4G
Product Attributes
- Breakdown Voltage :
- 40.9 V
- Clamping Voltage :
- 59.3 V
- Ipp - Peak Pulse Current :
- 10.6 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Number of Channels :
- 1 Channel
- Package / Case :
- DO-214AA-2
- Packaging :
- Reel
- Polarity :
- Bidirectional
- Pppm - Peak Pulse Power Dissipation :
- 600 W
- Product Type :
- TVS Diodes
- Qualification :
- AEC-Q101
- Series :
- PSMB
- Termination Style :
- SMD/SMT
- Vesd - Voltage ESD Air Gap :
- -
- Vesd - Voltage ESD Contact :
- -
- Working Voltage :
- 36.8 V
Description
ESD Suppressors / TVS Diodes 600W, 43V, 5%, Bidirectional, TVS
Price & Procurement
Associated Product
You May Also Be Interested In
Part | Manufacturer | Stock | Description |
---|---|---|---|
W631GG6NB15I | Winbond | 3,000 | DRAM 1Gb DDR3 SDRAM, x16, Industrial Temp. 667MHz |
W94AD6KBHX5I TR | Winbond | 3,000 | DRAM 1Gb LPDDR, x16, 200MHz, Ind temp T&R |
IS43TR82560DL-125KBLI | ISSI | 3,000 | DRAM 2G, 1.35V, DDR3L, 256Mx8, 1600MT/s @ 11-11-11, 78 ball BGA (8mm x10.5mm) RoHS, IT |
IS42SM16320E-6BLI | ISSI | 3,000 | DRAM 512M, 3.3V, Mobile SDRAM, 32Mx16, 166Mhz, 54 ball BGA (8mmx8mm) RoHS, IT |
S27KL0642DPBHV023 | Cypress Semiconductor | 3,000 | DRAM HyperRAM |
W971GG6NB25I TR | Winbond | 3,000 | DRAM 1Gb, DDR2-800, x16, Ind temp T&R |
MT46H64M32LFBQ-48 WT:C TR | Micron | 3,000 | DRAM MOBILE DDR 2G 64MX32 FBGA |
IS42S16160G-6TL-TR | ISSI | 3,000 | DRAM 256M, 3.3V, SDRAM, 16Mx16, 166MHz, 54 pin TSOP II RoHS, T&R |
IS43TR82560DL-125KBL | ISSI | 3,000 | DRAM 2G, 1.35V, DDR3L, 256Mx8, 1600MT/s @ 11-11-11, 78 ball BGA (8mm x10.5mm) RoHS, IT |
IS42S32800J-7TL-TR | ISSI | 3,000 | DRAM 256M, 3.3V, SDRAM, 8Mx32, 143Mhz, 86 pin TSOP II RoHS, T&R |
IS42S32800J-75EBL | ISSI | 3,000 | DRAM 256M, 3.3V, SDRAM, 8Mx32, 133Mhz @ CL2, 90 ball BGA (8mmx13mm) RoHS |
MT47H64M8SH-25E:H TR | Micron | 3,000 | DRAM DDR2 512M 64MX8 FBGA |
W989D2DBJX6I | Winbond | 3,000 | DRAM 512Mb LPSDR, x32, 166MHz, Ind Temp, 46nm |
S70KL1281DABHI020 | Cypress Semiconductor | 3,000 | DRAM IC 128 Mb FLASH MEMORY |
SQR-SD4I8G2K6SEBCB | Advantech | 3,000 | DRAM 260pin SODIMM DDR4 2400 8GB 1.2v 1Gx8(-40-85) |