Product overview

Part Number
EEU-TA1V101B
Manufacturer
Panasonic Electronic Components
Product Category
Aluminum Electrolytic Capacitors - Radial Leaded
Description
Aluminum Electrolytic Capacitors - Radial Leaded 100uF 35volts AEC-Q200

Documents & Media

Datasheets
EEU-TA1V101B

Product Attributes

Capacitance :
100 uF
Diameter :
10 mm
ESR :
180 mOhms
Lead Spacing :
5 mm
Lead Style :
Cut
Length :
12.5 mm
Life :
2000 Hour
Maximum Operating Temperature :
+ 125 C
Minimum Operating Temperature :
- 40 C
Packaging :
Cut Tape, Reel
Product :
General Purpose Electrolytic Capacitors
Qualification :
AEC-Q200
Ripple Current :
555 mA
Series :
TA
Termination Style :
Radial
Tolerance :
20 %
Voltage Rating DC :
35 VDC

Description

Aluminum Electrolytic Capacitors - Radial Leaded 100uF 35volts AEC-Q200

Price & Procurement

Associated Product

  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C256-6VQG100C
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C256-6TQG144C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 36-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C32A-6VQG44C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 72-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C64A-7VQG44C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 72-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C64A-7VQG44I
  • STMicroelectronics
    Microprocessors - MPU MPU ARM926 Cortex 8-ch DMA 32KB Rom
  • STMicroelectronics
    Embedded - CPLDs (Complex Programmable Logic Devices)

You May Also Be Interested In

Part Manufacturer Stock Description
AS7C34098A-20TINTR Alliance Memory 3,000 SRAM 4M, 3.3V, 20ns, FAST 256K x 16 Asyn SRAM
AS7C4096A-20TINTR Alliance Memory 3,000 SRAM 4M, 3.3V, 20ns, FAST 512K x 8 Asynch SRAM
AS7C34098A-20TCNTR Alliance Memory 3,000 SRAM 4M, 3.3V, 20ns, FAST 256K x 16 Asyn SRAM
AS7C34096A-20TINTR Alliance Memory 3,000 SRAM 4M, 3.3V, 20ns, FAST 512K x 8 Asynch SRAM
AS7C34096A-8TINTR Alliance Memory 3,000 SRAM 4M, 5V, FAST 512K x 8 Asynch SRAM
AS7C34096B-10TINTR Alliance Memory 3,000 SRAM 4M 3V 10ns FAST 512K x 8 Asynch SRAM
AS7C34098B-10TINTR Alliance Memory 3,000 SRAM 4M 2.7V 10ns FAST 256Kx16 Asynch SRAM
IS61WV102416ALL-20MLI ISSI 3,000 SRAM 16Mb,High-Speed,Async,1Mbx16,20ns/1.65v-2.2v, 48 Ball mBGA (9x11 mm), RoHS
IS62WV5128BLL-55TLI-TR ISSI 3,000 SRAM 4Mb, Low Power/Power Saver,Async,512K x 8,55ns,2.5v~3.6v,32 Pin TSOP I (8x20mm), RoHS
AS6C6264-55STCNTR Alliance Memory 3,000 SRAM 64K, 2.7-5.5V, 55ns 8K x 8 Asynch SRAM
IS61WV102416FBLL-10B2LI ISSI 3,000 SRAM 16Mb,High-Speed,Async,1Mbx16, 10ns, 2.4v-3.6v, 48 Ball mBGA (6x8 mm), ERR1/ERR2 Pins, RoHS
IS61DDPB41M18A-400M3L ISSI 3,000 SRAM 18Mb, DDR IIP (Burst of 4) CIO, Sync SRAM, 1M x 18, 2.5 Read Latency, 165 Ball FBGA (15x17 mm), RoHS
IS61DDP2B21M18A-400M3L ISSI 3,000 SRAM 18Mb, DDR IIP (Burst of 2) CIO, Sync SRAM, 1M x 18, 2.0 Read Latency, 165 Ball FBGA (15x17 mm), RoHS
IS61DDPB251236A-400M3L ISSI 3,000 SRAM 18Mb, DDR IIP (Burst of 2) CIO, Sync SRAM, 512K x 36, 2.5 Read Latency, 165 Ball FBGA (15x17 mm), RoHS
IS61QDB21M36A-250M3L ISSI 3,000 SRAM 36Mb, QUAD (Burst of 2), Sync SRAM, 1M x 36, 165 Ball FBGA (15x17 mm), RoHS