sales@szcinty.com
Product overview
- Part Number
- TISP5110H3BJR-S
- Manufacturer
- Bourns
- Product Category
- Thyristor Surge Protection Devices - TSPD
- Description
- Thyristor Surge Protection Devices - TSPD Forward Conducting Unidirectional
Documents & Media
- Datasheets
- TISP5110H3BJR-S
Product Attributes
- Breakover Current IBO Max :
- 600 mA
- Breakover Voltage VBO :
- - 110 V
- Holding Current Ih Max :
- 600 mA
- Maximum Operating Temperature :
- + 85 C
- Minimum Operating Temperature :
- - 40 C
- Mounting Style :
- SMD/SMT
- Non Repetitive On-State Current :
- 55 A, 60 A
- Off-State Capacitance CO :
- 65 pF to 240 pF
- Off-State Leakage Current @ VDRM IDRM :
- - 5 uA
- On-State Voltage :
- - 3 V
- Package / Case :
- DO-214AA-2
- Packaging :
- Reel
- Rated Repetitive Off-State Voltage VDRM :
- - 80 V
Description
Thyristor Surge Protection Devices - TSPD Forward Conducting Unidirectional
Price & Procurement
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