Product overview
- Part Number
- TB200HB-02B
- Manufacturer
- Bussmann / Eaton
- Product Category
- Barrier Terminal Blocks
- Description
- Barrier Terminal Blocks BARRIER BLOCK
Documents & Media
- Datasheets
- TB200HB-02B
Product Attributes
- Current Rating :
- 30 A
- Mounting Style :
- Panel
- Number of Positions :
- 2 Position
- Number of Rows :
- 2 Row
- Packaging :
- Bulk
- Pitch :
- 0.437 in
- Product :
- Barrier Terminal Blocks
- Series :
- TB200HB
- Type :
- High Barrier
- Voltage Rating :
- 600 V
- Wire Gauge Range :
- 22 AWG to 12 AWG
Description
Barrier Terminal Blocks BARRIER BLOCK
Price & Procurement
Associated Product
You May Also Be Interested In
Part | Manufacturer | Stock | Description |
---|---|---|---|
W972GG8KS-18 TR | Winbond | 3,000 | DRAM 2Gb DDR2-1066, x8 T&R |
W972GG8KS-25 TR | Winbond | 3,000 | DRAM 2Gb DDR2-800, x8 T&R, 8mmx9.5mm WBGA |
MT40A256M16LY-075:F TR | Micron | 3,000 | DRAM DDR4 4G 256MX16 FBGA |
MT40A512M8SA-075:F TR | Micron | 3,000 | DRAM DDR4 4G 512MX8 FBGA |
MT49H16M18SJ-25:B | Micron | 3,000 | DRAM RLDRAM 288M 16MX18 FBGA |
S70KL1283DPBHB020 | Cypress Semiconductor | 3,000 | DRAM HyperRAM |
S70KL1282DPBHB030 | Cypress Semiconductor | 3,000 | DRAM HyperRAM |
S70KL1282DPBHB020 | Cypress Semiconductor | 3,000 | DRAM HyperRAM |
MT42L64M32D2HE-18 IT:D TR | Micron | 3,000 | DRAM DRAM LPDDR2 U08M 2G |
MT53E512M16D1WW-046 WT ES:F TR | Micron | 3,000 | DRAM LPDDR4 8G X16 WFBGA |
S70KS1283GABHA020 | Cypress Semiconductor | 3,000 | DRAM HyperRAM |
MT53E256M32D2FW-046 IT:B TR | Micron | 3,000 | DRAM LPDDR4 8G 256MX32 FBGA DDP |
MT52L256M64D2LZ-107 WT:B TR | Micron | 3,000 | DRAM LPDDR3 16G 256MX64 FBGA DDP |
MT52L512M32D2PU-107 WT:B TR | Micron | 3,000 | DRAM LPDDR3 16G 512MX32 FBGA DDP |
MT52L256M64D2FT-107 WT:B TR | Micron | 3,000 | DRAM LPDDR3 16G 256MX64 WFBGA |