| BCR 553 E6327 |
Infineon Technologies |
3,000 |
Bipolar Transistors - Pre-Biased PNP Silicon Digital TRANSISTOR |
| BCR 196 E6327 |
Infineon Technologies |
3,000 |
Bipolar Transistors - Pre-Biased PNP Silicon Digital TRANSISTOR |
| DDTB114EU-7-F |
Diodes Incorporated |
3,000 |
Bipolar Transistors - Pre-Biased 200MW 10K |
| BCR533E6327HTSA1 |
Infineon Technologies |
3,000 |
Bipolar Transistors - Pre-Biased NPN Silicon Digital TRANSISTOR |
| DDTD133HC-7-F |
Diodes Incorporated |
3,000 |
Bipolar Transistors - Pre-Biased 200MW 3.3K 10K |
| BCR142E6327HTSA1 |
Infineon Technologies |
3,000 |
Bipolar Transistors - Pre-Biased NPN Silicon Digital TRANSISTOR |
| DDTB143EC-7-F |
Diodes Incorporated |
3,000 |
Bipolar Transistors - Pre-Biased 200MW 4.7K |
| BCR116SH6327XTSA1 |
Infineon Technologies |
3,000 |
Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTOR |
| BCR 35PN H6433 |
Infineon Technologies |
3,000 |
Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTOR |
| BCR523UE6327HTSA1 |
Infineon Technologies |
3,000 |
Bipolar Transistors - Pre-Biased NPN Silicon Digital TRANSISTOR |
| RN1114MFV(TPL3) |
Toshiba |
3,000 |
Bipolar Transistors - Pre-Biased 50volts 100mA 3Pin 1.0Kohms x 10Kohms |
| DTC144WM3T5G |
onsemi |
3,000 |
Bipolar Transistors - Pre-Biased 100mA 50V BRT NPN |
| RN2107MFV(TPL3) |
Toshiba |
3,000 |
Bipolar Transistors - Pre-Biased 100mA -50volts 3Pin 10K x 47Kohms |
| BCR133WH6327XTSA1 |
Infineon Technologies |
3,000 |
Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTOR |
| RN1119MFV(TPL3) |
Toshiba |
3,000 |
Bipolar Transistors - Pre-Biased Bias Resistor |
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