文档与媒体
产品详情
- Contact Material :
- Phosphor Bronze
- Contact Plating :
- Gold
- Current Rating :
- 1.5 A
- Housing Material :
- Liquid Crystal Polymer (LCP)
- Maximum Data Rate :
- 28 Gbps
- Maximum Operating Temperature :
- + 125 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Angle :
- Vertical
- Number of Positions :
- 80 Position
- Number of Rows :
- 2 Row
- Packaging :
- Cut Tape, Reel
- Pitch :
- 0.5 mm
- Product :
- Headers
- Series :
- ERM5
- Stack Height :
- 9 mm, 11 mm
- Termination Style :
- Solder
- Voltage Rating :
- 190 VAC
产品描述
Board to Board & Mezzanine Connectors 0.50 mm Edge Rate Rugged High Speed Terminal
采购与价格
推荐产品
您可能在找
型号 | 品牌 | 库存 | 描述 |
---|---|---|---|
IXTR90P20P | IXYS | 20 | MOSFET -90.0 Amps -200V 0.048 Rds |
APT20M16B2LLG | Microsemi / Microchip | 37 | MOSFET FG, MOSFET, 200V, 0.016_OHM, TO-247 T-MAX, RoHS |
IXFL132N50P3 | IXYS | 50 | MOSFET Polar3 HiPerFET Power MOSFET |
IXFL82N60P | IXYS | 16 | MOSFET 82 Amps 600V 0.78 Ohm Rds |
APT10035LFLLG | Microsemi / Microchip | 20 | MOSFET FG, FREDFET, 1000V, TO-264, RoHS |
IXFK80N50Q3 | IXYS | 8 | MOSFET Q3Class HiPerFET Pwr MOSFET 500V/80A |
APT12060LVFRG | Microsemi / Microchip | 18 | MOSFET FG, FREDFET, 1200V, TO-264, RoHS |
MMIX1T600N04T2 | IXYS | 30 | MOSFET 40V 600A |
IXFR32N100Q3 | IXYS | 47 | MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/23A |
LKK47-06C5 | IXYS | 2 | MOSFET 47 Amps 600V |
MMIX1F160N30T | IXYS | 25 | MOSFET SMPD MOSFETs Power Device |
MMIX1T550N055T2 | IXYS | 19 | MOSFET SMPD MOSFETs Power Device |
TSM080NB03CR RLG | Taiwan Semiconductor | 2,484 | MOSFET 30V 59A Single N-Chn Power MOSFET |
TSM60NB190CZ C0G | Taiwan Semiconductor | 3,771 | MOSFET 600V 18A Single N-Ch annel Power MOSFET |
TSM180N03CS RLG | Taiwan Semiconductor | 4,954 | MOSFET 30V, 9A, Single N-Channel Power MOSFET |