sales@szcinty.com
Обзор продукта
- номер части
- YPAL1.80T
- Производитель
- Amphenol Advanced Sensors
- Категория продукта
- Термисторы - PTC
- Описание
- PTC Thermistors 30VDC 1.8Ohm 0.45A Int 25% Tol
Документы и СМИ
- Спецификации
- YPAL1.80T
Атрибуты продукта
- Maximum Operating Temperature :
- + 60 C
- Minimum Operating Temperature :
- 0 C
- Packaging :
- Reel
- Resistance :
- 1.8 Ohms
- Series :
- YP
- Termination Style :
- Radial
- Tolerance :
- 25 %
Описание
PTC Thermistors 30VDC 1.8Ohm 0.45A Int 25% Tol
Цена и закупки
Сопутствующий продукт
Вас также может заинтересовать
| Часть | Производитель | Снабжать | Описание |
|---|---|---|---|
| S2D-18D3-0808-350-P | II-VI | 3,000 | Labels and Industrial Warning Signs 2D Silicon Nanostamp: Hexagonal hole, Period 700 nm, Etch Depth 350 nm, Feature Width 200 nm, Size 8.0 x 8.3 mm |
| SNS-C18-2009-140-D29-P | II-VI | 3,000 | Labels and Industrial Warning Signs Linear Silicon Nanostamp: Period 555 nm, Groove Depth 140 nm, Duty Cycle 29 %, Size 20.0 x 9 mm |
| S2D-24D2-0808-150-P | II-VI | 3,000 | Labels and Industrial Warning Signs 2D Silicon Nanostamp: Hexagonal hole, Period 600 nm, Etch Depth 150 nm, Feature Width 180 nm, Size 8.0 x 8.3 mm |
| S2D-24C3-0808-150-P | II-VI | 3,000 | Labels and Industrial Warning Signs 2D Silicon Nanostamp: Hexagonal post, Period 700 nm, Etch Depth 150 nm, Feature Width 220 nm, Size 8.0 x 8.3 mm. |
| S2D-24C2-0808-150-P | II-VI | 3,000 | Labels and Industrial Warning Signs 2D Silicon Nanostamp: Hexagonal post, Period 600 nm, Etch Depth 150 nm, Feature Width 165 nm, Size 8.0 x 8.3 mm |
| S2D-18C2-0808-150-P | II-VI | 3,000 | Labels and Industrial Warning Signs 2D Silicon Nanostamp: Hexagonal post, Period 600 nm, Etch Depth 150 nm, Feature Width 240 nm, Size 8.0 x 8.3 mm |
| S2D-24D3-0808-350-P | II-VI | 3,000 | Labels and Industrial Warning Signs 2D Silicon Nanostamp: Hexagonal hole, Period 700 nm, Etch Depth 350 nm, Feature Width 290 nm, Size 8.0 x 8.3 mm. |
| SNS-C14.3-0808-150-D45-P | II-VI | 3,000 | Labels and Industrial Warning Signs Linear Silicon Nanostamp: Period 700 nm, Groove Depth 150 nm, Duty Cycle 47%, Size 8.0 x 8.3 mm |
| SNS-C20-0808-350-D45-P | II-VI | 3,000 | Labels and Industrial Warning Signs Linear Silicon Nanostamp: Period 500 nm, Groove Depth 350 nm, Duty Cycle 44 %, Size 8.0 x 8.3 mm |
| SNS-C16.7-0808-150-D45-P | II-VI | 3,000 | Labels and Industrial Warning Signs Linear Silicon Nanostamp: Period 600 nm, Groove Depth 150 nm, Duty Cycle 43%, Size 8.0 x 8.3 mm |
| S2D-24B2-0808-150-P | II-VI | 3,000 | Labels and Industrial Warning Signs 2D Silicon Nanostamp: Rectangular post, Period 600 nm, Etch Depth 150 nm, Feature Width 195 nm, Size 8.0 x 8.3 mm. |
| S2D-18C3-0808-150-P | II-VI | 3,000 | Labels and Industrial Warning Signs 2D Silicon Nanostamp: Hexagonal post, Period 700 nm, Etch Depth 150 nm, Feature Width 290 nm, Size 8.0 x 8.3 mm |
| SNS-C18-2009-140-D50-P | II-VI | 3,000 | Labels and Industrial Warning Signs Linear Silicon Nanostamp: Period 555 nm, Groove Depth 140 nm, Duty Cycle 50%, Size 20.0 x 9 mm |
| SNS-C18-2009-110-D29-P | II-VI | 3,000 | Labels and Industrial Warning Signs Linear Silicon Nanostamp: Period 555 nm, Groove Depth 110 nm, Duty Cycle 29 %, Size 20.0 x 9 mm |
| SNS-C14.3-0808-350-D55-P | II-VI | 3,000 | Labels and Industrial Warning Signs Linear Silicon Nanostamp: Period 700 nm, Groove Depth 350 nm, Duty Cycle 55%, Size 8.0 x 8.3 mm |
