Обзор продукта

номер части
B39152B3421U410
Производитель
Qualcomm RF360
Категория продукта
Преобразование сигнала
Описание
Signal Conditioning 1542MHz 1.4dB AEC-Q200

Документы и СМИ

Спецификации
B39152B3421U410

Атрибуты продукта

Frequency :
1.542 GHz
Frequency Range :
1.525 GHz to 1.559 GHz
Impedance :
50 Ohms
Maximum Operating Temperature :
+ 125 C
Minimum Operating Temperature :
- 45 C
Packaging :
Cut Tape, Reel
Product :
SAW Filters
Product Type :
Signal Conditioning
Qualification :
AEC-Q200
Series :
B3421
Termination Style :
SMD/SMT

Описание

Signal Conditioning 1542MHz 1.4dB AEC-Q200

Цена и закупки

Сопутствующий продукт

  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C256-6VQG100C
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C256-6TQG144C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 36-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C32A-6VQG44C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 72-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C64A-7VQG44C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 72-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C64A-7VQG44I
  • STMicroelectronics
    Microprocessors - MPU MPU ARM926 Cortex 8-ch DMA 32KB Rom
  • STMicroelectronics
    Embedded - CPLDs (Complex Programmable Logic Devices)

Вас также может заинтересовать

Часть Производитель Снабжать Описание
MT48LC64M8A2P-75:C TR Alliance Memory 3,000 DRAM 512Mb, 3.3v, 133Mhz 64M x 8 Sync DRAM
MT41K512M16HA-107:ATR Alliance Memory 3,000 DRAM
W9751G8NB25I Winbond 3,000 DRAM 512Mb DDR2-800, x8 Ind Temp
W94AD2KBJX5I Winbond 3,000 DRAM 1Gb LPDDR, x32, 200MHz, Ind temp
MT53E256M16D1DS-046 WT:B Micron 3,000 DRAM LPDDR4 4G 256MX16 FBGA
IS42S32400F-6BL-TR ISSI 3,000 DRAM 128M, 3.3V, SDRAM, 4Mx32, 166Mhz, 90 ball BGA (8mmx13mm) RoHS, T&R
IS43TR16640C-107MBLI ISSI 3,000 DRAM 1G, 1.5V, DDR3, 64Mx16, 1866MT/s @ 13-13-13, 96 ball BGA (9mm x13mm) RoHS, IT
AS4C128M16D3LC-12BINTR Alliance Memory 3,000 DRAM
IS43R16800E-6TL ISSI 3,000 DRAM 128M (8Mx16) 166MHz 2.5v DDR SDRAM
IS42S16800F-6BLI-TR ISSI 3,000 DRAM 128M, 3.3V, SDRAM, 8Mx16, 166Mhz, 54 ball BGA (8mmx8mm) ROHS, IT, T&R
AS4C32M8D1-5TCN Alliance Memory 3,000 DRAM
IS42S32800J-7TLI-TR ISSI 3,000 DRAM 256M, 3.3V, SDRAM, 8Mx32, 143Mhz, 86 pin TSOP II RoHS, IT, T&R
IS42S16320F-7TL-TR ISSI 3,000 DRAM 512M, 3.3V, SDRAM, 32Mx16, 143MHz, 54 pin TSOP II (400 mil) RoHS, T&R
IS49RL36160-107EBLI ISSI 3,000 DRAM RLDRAM3 Memory, 576Mbit, x36, Common I/O, 933Mhz, tRC=8ns, RoHS, Ind. Temp
W97AH2NBVA2E Winbond 3,000 DRAM 1Gb LPDDR2, x32, 400MHz, -25 85C