Спецификации

BSG0813NDIATMA1

Channel Mode :

Enhancement

Id - Continuous Drain Current :

50 A, 50 A

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 55 C

Mounting Style :

SMD/SMT

Number of Channels :

2 Channel

Package / Case :

TISON-8

Packaging :

Reel

Pd - Power Dissipation :

2.5 W, 6.25 W

Qg - Gate Charge :

5.6 nC, 15 nC

Rds On - Drain-Source Resistance :

2.4 mOhms, 3.2 mOhms

Technology :

SI

Tradename :

OptiMOS

Transistor Polarity :

N-Channel

Vds - Drain-Source Breakdown Voltage :

25 V

Vgs - Gate-Source Voltage :

- 16 V, + 16 V

Vgs th - Gate-Source Threshold Voltage :

1.6 V