Спецификации

SISS80DN-T1-GE3

Channel Mode :

Enhancement

Id - Continuous Drain Current :

210 A

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 55 C

Mounting Style :

SMD/SMT

Number of Channels :

1 Channel

Packaging :

Cut Tape, MouseReel, Reel

Pd - Power Dissipation :

65 W

Qg - Gate Charge :

81 nC

Rds On - Drain-Source Resistance :

920 uOhms

Technology :

SI

Tradename :

TrenchFET

Transistor Polarity :

N-Channel

Vds - Drain-Source Breakdown Voltage :

20 V

Vgs - Gate-Source Voltage :

- 8 V, + 12 V

Vgs th - Gate-Source Threshold Voltage :

1.5 V