Спецификации

TGF2819-FL

Gain :

14 dB

Id - Continuous Drain Current :

7.32 A

Maximum Drain Gate Voltage :

145 V

Maximum Operating Temperature :

+ 85 C

Minimum Operating Temperature :

- 40 C

Mounting Style :

Screw Mount

Operating Frequency :

3.5 GHz

Output Power :

100 W

Package / Case :

NI-360

Packaging :

Tray

Pd - Power Dissipation :

86 W

Technology :

GaN-on-SiC

Transistor Polarity :

N-Channel

Transistor Type :

HEMT

Vds - Drain-Source Breakdown Voltage :

32 V

Vgs - Gate-Source Breakdown Voltage :

- 2.9 V