Спецификации

QPD1008

Gain :

17.5 dB

Id - Continuous Drain Current :

4 A

Maximum Operating Temperature :

+ 85 C

Minimum Operating Temperature :

- 40 C

Mounting Style :

SMD/SMT

Operating Frequency :

3.2 GHz

Output Power :

162 W

Package / Case :

NI-360

Packaging :

Tray

Pd - Power Dissipation :

127 W

Technology :

GaN-on-SiC

Transistor Polarity :

N-Channel

Transistor Type :

HEMT

Vds - Drain-Source Breakdown Voltage :

50 V

Vgs - Gate-Source Breakdown Voltage :

145 V