rfq@cintymcu.com
Resumo do Produto
- Número da peça
- RBN50H65T1FPQ-A0#CB0
- Fabricante
- Renesas Electronics
- Categoria de Produto
- Transistores IGBT
- Descrição
- IGBT Transistors IGBT- G8H 650V/50A built-in FRD TO247A
Documentos e mídia
- Folhas de dados
- RBN50H65T1FPQ-A0#CB0
Atributos do produto
- Collector- Emitter Voltage VCEO Max :
- 650 V
- Collector-Emitter Saturation Voltage :
- 1.5 V
- Configuration :
- Single
- Continuous Collector Current at 25 C :
- 100 A
- Maximum Gate Emitter Voltage :
- 30 V
- Maximum Operating Temperature :
- + 175 C
- Mounting Style :
- Through Hole
- Package / Case :
- TO-247A-3
- Packaging :
- Tube
- Pd - Power Dissipation :
- 250 W
- Technology :
- SI
Descrição
IGBT Transistors IGBT- G8H 650V/50A built-in FRD TO247A
Preço e Aquisição
Produto Associado
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