rfq@cintymcu.com
Resumo do Produto
- Número da peça
- APTCV50H60T3G
- Fabricante
- Microsemi / Microchip
- Categoria de Produto
- Módulos IGBT
- Descrição
- IGBT Modules DOR CC3133
Documentos e mídia
- Folhas de dados
- APTCV50H60T3G
Atributos do produto
- Collector- Emitter Voltage VCEO Max :
- 600 V
- Collector-Emitter Saturation Voltage :
- 1.5 V
- Configuration :
- Full Bridge
- Continuous Collector Current at 25 C :
- 80 A
- Gate-Emitter Leakage Current :
- 600 nA
- Maximum Operating Temperature :
- + 100 C
- Minimum Operating Temperature :
- - 40 C
- Package / Case :
- SP3-32
- Packaging :
- Tube
- Pd - Power Dissipation :
- 176 W
- Product :
- IGBT Silicon Modules
Descrição
IGBT Modules DOR CC3133
Preço e Aquisição
Produto Associado
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