rfq@cintymcu.com
Resumo do Produto
- Número da peça
- APTGT30A170T1G
- Fabricante
- Microsemi / Microchip
- Categoria de Produto
- Módulos IGBT
- Descrição
- IGBT Modules DOR CC8030
Documentos e mídia
- Folhas de dados
- APTGT30A170T1G
Atributos do produto
- Collector- Emitter Voltage VCEO Max :
- 1.7 kV
- Collector-Emitter Saturation Voltage :
- 2 V
- Configuration :
- Dual
- Continuous Collector Current at 25 C :
- 45 A
- Gate-Emitter Leakage Current :
- 600 nA
- Maximum Operating Temperature :
- + 100 C
- Minimum Operating Temperature :
- - 40 C
- Package / Case :
- SP1-12
- Packaging :
- Tube
- Pd - Power Dissipation :
- 210 W
- Product :
- IGBT Silicon Modules
Descrição
IGBT Modules DOR CC8030
Preço e Aquisição
Produto Associado
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