Resumo do Produto
- Número da peça
- APTGLQ80HR120CT3G
- Fabricante
- Microsemi / Microchip
- Categoria de Produto
- Módulos IGBT
- Descrição
- IGBT Modules DOR CC3176
Documentos e mídia
- Folhas de dados
- APTGLQ80HR120CT3G
Atributos do produto
- Collector- Emitter Voltage VCEO Max :
- 1.2 kV, 600 V
- Collector-Emitter Saturation Voltage :
- 2.05 V, 1.5 V
- Configuration :
- Dual Common Emitter
- Continuous Collector Current at 25 C :
- 150 A, 100 A
- Gate-Emitter Leakage Current :
- 240 nA, 600 nA
- Maximum Operating Temperature :
- + 100 C
- Minimum Operating Temperature :
- - 40 C
- Packaging :
- Tube
- Pd - Power Dissipation :
- 500 W, 250 W
- Product :
- IGBT Silicon Modules
Descrição
IGBT Modules DOR CC3176
Preço e Aquisição
Produto Associado
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