Descripción del producto

Número de parte
IXFH69N30P
Fabricante
IXYS
categoria de producto
MOSFET
Descripción
MOSFET 69 Amps 300V 0.049 Rds

Documentos y Medios

Hojas de datos
IXFH69N30P

Atributos del producto

Channel Mode :
Enhancement
Id - Continuous Drain Current :
69 A
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
Through Hole
Number of Channels :
1 Channel
Package / Case :
TO-247-3
Packaging :
Tube
Pd - Power Dissipation :
500 W
Qg - Gate Charge :
156 nC
Rds On - Drain-Source Resistance :
49 mOhms
Technology :
SI
Tradename :
HiPerFET
Transistor Polarity :
N-Channel
Vds - Drain-Source Breakdown Voltage :
300 V
Vgs - Gate-Source Voltage :
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage :
5 V

Descripción

MOSFET 69 Amps 300V 0.049 Rds

Precio y Adquisiciones

Producto asociado

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  • STMicroelectronics
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