sales@szcinty.com
Produktübersicht
- Artikelnummer
- 1812ZD226KAT2A
- Hersteller
- Kyocera AVX
- Produktkategorie
- Mehrschichtige Keramikkondensatoren MLCC - SMD/SMT
- Beschreibung
- Multilayer Ceramic Capacitors MLCC - SMD/SMT 10V 22uF X5R 1812 10%
Dokumente & Medien
- Datenblätter
- 1812ZD226KAT2A
Produkteigenschaften
- Capacitance :
- 22 uF
- Case Code - in :
- 1812
- Case Code - mm :
- 4532
- Dielectric :
- X5R
- Height :
- 2.79 mm
- Maximum Operating Temperature :
- + 85 C
- Minimum Operating Temperature :
- - 55 C
- Packaging :
- Cut Tape, MouseReel, Reel
- Product :
- General Type MLCCs
- Series :
- X5R
- Termination :
- Standard
- Termination Style :
- SMD/SMT
- Tolerance :
- 10 %
- Voltage Rating DC :
- 10 VDC
Beschreibung
Multilayer Ceramic Capacitors MLCC - SMD/SMT 10V 22uF X5R 1812 10%
Preis & Beschaffung
Zugehöriges Produkt
Das könnte Sie auch interessieren
| Teil | Hersteller | Lager | Beschreibung |
|---|---|---|---|
| 2N3300 PBFREE | Central Semiconductor | 3,000 | Bipolar Transistors - BJT NPN Gen Pur SS |
| 2N3900A PBFREE | Central Semiconductor | 3,000 | Bipolar Transistors - BJT PNP Transistor General Purpose |
| MPS6531 APM PBFREE | Central Semiconductor | 3,000 | Bipolar Transistors - BJT Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/Switch |
| MPS6531 TRE PBFREE | Central Semiconductor | 3,000 | Bipolar Transistors - BJT Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/Switch |
| PN3638A APP TIN/LEAD | Central Semiconductor | 3,000 | Bipolar Transistors - BJT PNP 25Vcbo 25Vceo 4.0Vebo 300mA 10pF |
| PN3638A TRC TIN/LEAD | Central Semiconductor | 3,000 | Bipolar Transistors - BJT PNP 25Vcbo 25Vceo 4.0Vebo 300mA 10pF |
| BC337-16 PBFREE | Central Semiconductor | 3,000 | Bipolar Transistors - BJT NPN 50Vcbo 45Vceo 5.0Vebo 800mA 625mW |
| CEN-U06 PBFREE | Central Semiconductor | 3,000 | Bipolar Transistors - BJT 80Vbo 80Vceo 4.0Vebo 2.0A 10W |
| 2N5356 APM TIN/LEAD | Central Semiconductor | 3,000 | Bipolar Transistors - BJT PNP 25Vcbo 25Vceo 4.0Vebo 350mA 360mW |
| PN4209 APM TIN/LEAD | Central Semiconductor | 3,000 | Bipolar Transistors - BJT Through-Hole Transistor-Small Signal (<=1A) PNP Saturated Switch |
| PN4209 TRE TIN/LEAD | Central Semiconductor | 3,000 | Bipolar Transistors - BJT Through-Hole Transistor-Small Signal (<=1A) PNP Saturated Switch |
| 2N3703 APM PBFREE | Central Semiconductor | 3,000 | Bipolar Transistors - BJT Through-Hole Transistor-Small Signal (<=1A) PNP General Purpose Amplifier/Switch |
| 2N5818 PBFREE | Central Semiconductor | 3,000 | Bipolar Transistors - BJT NPN Gen Pur SS |
| MPS6518 APM PBFREE | Central Semiconductor | 3,000 | Bipolar Transistors - BJT Through-Hole Transistor-Small Signal (<=1A) PNP General Purpose Amplifier/Switch |
| 2N3703 TRE PBFREE | Central Semiconductor | 3,000 | Bipolar Transistors - BJT Through-Hole Transistor-Small Signal (<=1A) PNP General Purpose Amplifier/Switch |
