Produktübersicht
- Artikelnummer
- 2SB1308T100Q
- Hersteller
- ROHM Semiconductor
- Produktkategorie
- Bipolartransistoren - BJT
- Beschreibung
- Bipolar Transistors - BJT PNP 20V 3A
Dokumente & Medien
- Datenblätter
- 2SB1308T100Q
Produkteigenschaften
- Collector- Base Voltage VCBO :
- - 50 V
- Collector- Emitter Voltage VCEO Max :
- 20 V
- Configuration :
- Single
- Emitter- Base Voltage VEBO :
- 6 V
- Gain Bandwidth Product fT :
- 120 MHz
- Maximum DC Collector Current :
- 3 A
- Maximum Operating Temperature :
- + 150 C
- Mounting Style :
- SMD/SMT
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 2000 mW
- Series :
- 2SB1308
- Transistor Polarity :
- PNP
Beschreibung
Bipolar Transistors - BJT PNP 20V 3A
Preis & Beschaffung
Zugehöriges Produkt
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