Produktübersicht
- Artikelnummer
- 2SD1618T-TD-E
- Hersteller
- onsemi
- Produktkategorie
- Bipolartransistoren - BJT
- Beschreibung
- Bipolar Transistors - BJT BIP NPN 0.7A 15V
Dokumente & Medien
- Datenblätter
- 2SD1618T-TD-E
Produkteigenschaften
- Collector- Base Voltage VCBO :
- 20 V
- Collector- Emitter Voltage VCEO Max :
- 15 V
- Collector-Emitter Saturation Voltage :
- 80 mV
- Configuration :
- Single
- Emitter- Base Voltage VEBO :
- 5 V
- Gain Bandwidth Product fT :
- 250 MHz
- Maximum Operating Temperature :
- + 150 C
- Mounting Style :
- SMD/SMT
- Package / Case :
- TO-243-3
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 1.3 W
- Series :
- 2SD1618
- Transistor Polarity :
- NPN
Beschreibung
Bipolar Transistors - BJT BIP NPN 0.7A 15V
Preis & Beschaffung
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